Hynix is ready to start the chips DDR-3 on 40nm
Samsung has already shown DDR2-800 memory released on 40nm process, we will see DDR-3 40nm not earlier than the end of 2009.
Other large memory chip’s manufacturer, Hynix Semiconductor, has declared 1 Gbit DDR-3 40nm chips. Chips should be approved Intel company as it is released according to specifications.
New generation Hynix memory is applied in modes to DDR3-2133 inclusively at a wide range of power voltages. From one silicon slice Hynix receives in 1,5 times more chips, than at usage of technology of 50 nanometers. The technology of “the three-dimensional transistor” allows to lower leaked currents and the general level of power consumption of memory. Mass production 1 Gbit DDR-3 40nm chips will start in the third quarter of current year.
Hynix plans to use 40 nanometers technical process in production of other types of memory, for example, videocards memory. The company hopes that 40 nanometer chips DDR-3 will take the lead positions in the market in the second half of the year.
Tags:DDR hardware memory RAM